Medical Equipment (MRI)
Fuji Electric’s semiconductors play a vital role in powering advanced medical equipment applications, including MRI systems and other high-performance diagnostic imaging technologies. As medical devices continue to evolve toward higher precision, faster imaging speeds, and more compact system designs, our semiconductor technologies help improve power efficiency, increase reliability, and support stable system operation. Fuji’s advanced IGBT and power semiconductor solutions are utilized in power supplies, gradient amplifiers, cooling systems, and precision motor control applications within MRI equipment and related medical systems. With high thermal durability, fast switching performance, and proven long-term reliability, Fuji Electric’s latest semiconductor technologies help manufacturers enhance imaging performance, reduce energy consumption, and support the development of next-generation medical equipment. Scroll down to explore which semiconductor products are best suited for your application.
Semiconductors
Fuji Electric’s semiconductors play a critical role in advanced medical equipment applications including MRI systems, CT scanners, and diagnostic imaging platforms. Our 7th generation RC-IGBT technology advancement enables high-efficiency power conversion and precision control for demanding medical systems. Our Discrete IGBT XS Series reduces switching loss and supports compact, high-performance inverter and power supply designs. Our SiC-SBD technology increases power efficiency while supporting stable operation and thermal performance in continuously operating medical environments. Fuji Electric’s semiconductors are utilized in power supplies, gradient amplifiers, cooling systems, compressors, and precision motor control applications for next-generation medical equipment platforms. Our 7th generation IGBT, Discrete IGBT XS Series, and SiC-SBD technologies provide faster switching, improved thermal management, and high reliability for critical healthcare applications.
Discrete IGBT XS Series
- VCE(sat) – Switching Loss Trade-off Improvement – Reduces VCE(sat) by 0.5V and reduces switching loss by 20%
- Optimized IGBT, FWD – Optimized for approximately fc = 20 kHz operation
- Ideal for 3-Level Inverters, Bridge Inverters, and PFC Circuits – Reduces inverter loss by 12% compared with previous products
SiC Schottky Barrier Diode
- Increase Power Efficiency – 18% lower conduction loss than conventional products
- Enhanced Reliability – 64% higher surge current capability
- Decrease Device Temperature – Lower conduction loss than products in whole temperature range
The 7th Generation IGBT Modules Achieves All Market Demands!
- Size Reduction – Size Reduction of IGBT Modules was realized by the 7th Generation Chip & Package Technologies
- Low Loss Energy – The Inverter Losses of the 7th Generation IGBT Modules were reduced by 10% compared to the 6th Generation
- High Reliability – Continuous Operating Temperature was Expanded up to 175oC by Improvement of Chip Characteristics & Package Reliability
